SEMI OpenIR  > 中科院半导体材料科学重点实验室
Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature
Kong N (Kong Ning); Liu JQ (Liu Jun-Qi); Li L (Li Lu); Liu FQ (Liu Feng-Qi); Wang LJ (Wang Li-Jun); Wang ZG (Wang Zhan-Guo); Kong, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: fqliu@red.semi.ac.cn
2010
Source PublicationCHINESE PHYSICS LETTERS
Volume27Issue:3Pages:Art. No. 038501
AbstractWe present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.
metadata_24其它
KeywordWell Infrared Photodetectors Laser
Subject Area半导体材料
Funding OrganizationNational Science Fund for Distinguished Young Scholars of China 60525406 ; National Natural Science Foundation of China 60736031 60806018 60906026 10990100; National Basic Research Program of China 2006CB604903 ; National High-tech R&D Program of China 2007AA03Z446 2009AA03Z403
Indexed BySCI
Language英语
Date Available2010-04-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11187
Collection中科院半导体材料科学重点实验室
Corresponding AuthorKong, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: fqliu@red.semi.ac.cn
Recommended Citation
GB/T 7714
Kong N ,Liu JQ ,Li L ,et al. Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature[J]. CHINESE PHYSICS LETTERS,2010,27(3):Art. No. 038501.
APA Kong N .,Liu JQ .,Li L .,Liu FQ .,Wang LJ .,...&Kong, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: fqliu@red.semi.ac.cn.(2010).Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature.CHINESE PHYSICS LETTERS,27(3),Art. No. 038501.
MLA Kong N ,et al."Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature".CHINESE PHYSICS LETTERS 27.3(2010):Art. No. 038501.
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