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Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
Ning JQ; Xu SJ; Ruan XZ; Ji Y; Zheng HZ; Sheng WD; Liu HC; Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume110Issue:5Pages:54320
AbstractElectronic band structures and spin states of the InAs/GaAs quantum dots (QDs) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved Kerr rotation (TRKR) with and without magnetic field. Sign change of the Kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. By carefully examining the dependence of TRKR signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the Kerr signal is uncovered. It is due to the resonant excitations of electrons with opposite spin orientations at heavy-(hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in QDs for the excitation laser pulses. This measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k = 0 point in the dots. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633508]
metadata_83半导体超晶格国家重点实验室
KeywordWells Relaxation Hole Photoluminescence Semiconductors Localization Transitions Excitons Carriers Growth
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22679
Collection半导体超晶格国家重点实验室
Corresponding AuthorNing, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
Recommended Citation
GB/T 7714
Ning JQ,Xu SJ,Ruan XZ,et al. Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation[J]. JOURNAL OF APPLIED PHYSICS,2011,110(5):54320.
APA Ning JQ.,Xu SJ.,Ruan XZ.,Ji Y.,Zheng HZ.,...&Ning, JQ .(2011).Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation.JOURNAL OF APPLIED PHYSICS,110(5),54320.
MLA Ning JQ,et al."Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation".JOURNAL OF APPLIED PHYSICS 110.5(2011):54320.
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