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Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells
Wei Liu ;  Feng Liang ;  Degang Zhao ;  Jing Yang ;  Desheng Jiang ;  Jianjun Zhu ;   Zongshun Liu
2019
Source PublicationMaterials Research Express
Volume6Pages:076203
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29636
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wei Liu ;Feng Liang ;Degang Zhao ;Jing Yang ;Desheng Jiang ;Jianjun Zhu ; Zongshun Liu. Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells[J]. Materials Research Express,2019,6:076203.
APA Wei Liu ;Feng Liang ;Degang Zhao ;Jing Yang ;Desheng Jiang ;Jianjun Zhu ; Zongshun Liu.(2019).Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells.Materials Research Express,6,076203.
MLA Wei Liu ;Feng Liang ;Degang Zhao ;Jing Yang ;Desheng Jiang ;Jianjun Zhu ; Zongshun Liu."Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells".Materials Research Express 6(2019):076203.
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