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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells 期刊论文
Chinese Physics Letters, 2019, 卷号: 36, 期号: 7, 页码: 077201
Authors:  Xiao-di Xue ;   Yu Liu ;   Lai-pan Zhu ;   Wei Huang ;   Yang Zhang ;   Xiao-lin Zeng ;   Jing Wu ;   Bo Xu ;   Zhan-guo Wang ;   Yong-hai Chen ;   Wei-feng Zhang
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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
Authors:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
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Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 118102
Authors:  Jing Zhang;  Hong-Liang Lv;  Hai-Qiao Ni;  Shi-Zheng Yang;  Xiao-Ran Cui;  Zhi-Chuan Niu;  Yi-Men Zhang and Yu-Ming Zhang
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Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 1077-1080
Authors:  Xiaowei Wang ;   Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Jing Yang
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Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 4, 页码: 045417
Authors:  Xiaodi Xue;   Laipan Zhu;   Wei Huang;   Xavier Marie;   Pierre Renucci;   Yu Liu;   Yang Zhang;   Xiaolin Zeng;   Jing Wu;   Bo Xu;   Zhanguo Wang;   Yonghai Chen;   Weifeng Zhang;   Yuan Lu
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Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文
Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153
Authors:  Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang
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Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells 期刊论文
Materials Research Express, 2019, 卷号: 6, 页码: 076203
Authors:  Wei Liu ;  Feng Liang ;  Degang Zhao ;  Jing Yang ;  Desheng Jiang ;  Jianjun Zhu ;   Zongshun Liu
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Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280
Authors:  Shuangtao Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Feng Liang;  Ping Chen;  Zongshun Liu;  Yao Xing;  Liyuan Peng
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Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文
Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951
Authors:  FENG LIANG ;   DEGANG ZHAO ;   DESHENG JIANG ;   ZONGSHUN LIU ;   JIANJUN ZHU ;   PING CHEN ;   JING YANG ;   LIQUN ZHANG
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The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Wei Liu ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang ;   Wenjie Wang ;   Mo Li ;   Yuantao Zhang ;   Guotong Du
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