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Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells
Yang, J; Zhao, DG; Jiang, DS; Jahn, U; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; He, XG; Li, XJ; Wang, H; Yang, H
2014
Source PublicationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume32Issue:5Pages:051503
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26196
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yang, J,Zhao, DG,Jiang, DS,et al. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2014,32(5):051503.
APA Yang, J.,Zhao, DG.,Jiang, DS.,Jahn, U.,Chen, P.,...&Yang, H.(2014).Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,32(5),051503.
MLA Yang, J,et al."Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 32.5(2014):051503.
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