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19μm quantum cascade infrared photodetectors 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 191120 - 191120-4
Authors:  Zhai, Shen-Qiang;  Liu, Jun-Qi;  Wang, Xue-Jiao;  Zhuo, Ning;  Liu, Feng-Qi;  Wang, Zhan-Guo;  Liu, Xi-Hui;  Li, Ning;  Lu, Wei
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Aluminium Compounds  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Infrared Detectors  Leakage Currents  Photodetectors  Photodetectors  Bolometers  Infrared Submillimeter Wave microWave And radioWave Receivers And Detectors  
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan;  Xu, Y.(yingqxu@semi.ac.cn)
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Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction  
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文
Optoelectronics Letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Authors:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng;  Shang, Xiang-jun;  Niu, Zhi-chuan;  Zhu, Y.(ttcow@126.com)
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Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
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Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe  
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
PHYSICS LETTERS A, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
Authors:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn
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First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys  
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 页码: 314-316
Authors:  Hu, Weixuan;  Cheng, Buwen;  Xue, Chunlai;  Su, Shaojian;  Liu, Zhi;  Li, Yaming;  Wang, Qiming;  Cheng, B.(cbw@semi.ac.cn)
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Epitaxial Growth  Germanium  Indium  Photonics  Semiconducting Silicon Compounds  Silicon  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002
Authors:  Qiu, Yingping;  Wang, Yang;  Shao, Yongbo;  Zhou, Daibing;  Liang, Song;  Zhao, Lingjuan;  Wang, Wei;  Qiu, Y.(ypqiu@semi.ac.cn)
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Absorption  Capacitance  Fabrication  Light Extinction  Semiconducting Indium Gallium Arsenide  Waveguides  
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas