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Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure
Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan,; Bi, Y.(ybi@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:8Pages:83003
AbstractElectrical properties of InxAl1- xN/AlN/GaN structure are investigated by solving coupled Schro¨dinger and Poisson equations self-consistently. The variations in internal polarizations in In xAl1- xN with indium contents are studied and the total polarization is zero when the indium content is0.41. Our calculations show that the two-dimensional electron gas(2DEG) sheet density will decrease with increasing indium content. There is a critical thickness for AlN. The2DEG sheet density will increase with InxAl1- xN thickness when the AlN thickness is less than the critical value. However, once the AlN thickness becomes greater than the critical value, the2DEG sheet density will decrease with increasing barrier thickness. The critical value of AlN is2.8 nm for the lattice-matched In0.18Al0.82N/AlN/GaN structure. Our calculations also show that the critical value decreases with increasing indium content.?2011 Chinese Institute of Electronics.
metadata_83半导体材料科学中心
KeywordAluminum Electron Mobility Gallium Nitride High Electron Mobility Transistors Indium Poisson Equation Polarization Two Dimensional Electron Gas
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23044
Collection半导体材料科学中心
Corresponding AuthorBi, Y.(ybi@semi.ac.cn)
Recommended Citation
GB/T 7714
Bi, Yang,Wang, Xiaoliang,Xiao, Hongling,et al. Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure[J]. Journal of Semiconductors,2011,32(8):83003.
APA Bi, Yang.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Bi, Y..(2011).Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure.Journal of Semiconductors,32(8),83003.
MLA Bi, Yang,et al."Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure".Journal of Semiconductors 32.8(2011):83003.
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