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采用干法刻蚀技术实现RTD与HEMT单片集成的方法 专利
专利类型: 发明, 申请日期: 2007-10-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马龙;  杨富华;  王良臣;  黄应龙
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A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 3, 页码: 332-336
Authors:  Dai Yang;  Huang Yinglong;  Liu Wei;  Ma Long;  Yang Fuhua;  Wang Liangchen;  Zeng Yiping;  Zheng Houzhi
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共振遂穿二极管与高电子迁移率晶体管器件制作方法 专利
专利类型: 发明, 申请日期: 2006-07-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄应龙;  杨富华;  王良臣;  王建林;  伊小燕;  马龙
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对砷化铝/砷化镓的砷化镓高选择比化学腐蚀液 专利
专利类型: 发明, 申请日期: 2006-07-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄应龙;  杨富华;  王良臣;  姜磊;  白云霞;  王莉
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基于RTD与CMOS的新型数字电路设计 期刊论文
固体电子学研究与进展, 2006, 卷号: 26, 期号: 3, 页码: 295-299
Authors:  马龙;  王良臣;  黄应龙;  杨富华
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基于共振隧穿二极管的集成电路研究 期刊论文
电子器件, 2006, 卷号: 29, 期号: 3, 页码: 627-634
Authors:  马龙;  杨富华;  王良臣;  余洪敏;  黄应龙
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Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 959-962
Authors:  Ma Long;  Huang Yinglong;  Zhang Yang;  Wang Liangchen;  Yang Fuhua;  Zeng Yiping
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