SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
采用干法刻蚀技术实现RTD与HEMT单片集成的方法
马龙; 杨富华; 王良臣; 黄应龙
2007-10-31
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2006-04-28
Language中文
Application Number200610076521
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3899
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
马龙,杨富华,王良臣,等. 采用干法刻蚀技术实现RTD与HEMT单片集成的方法[P]. 2007-10-31.
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