SEMI OpenIR  > 中科院半导体材料科学重点实验室
Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts
Wenna Du; Xiaoguang Yang; Huayong Pan; Xianghai Ji; Haiming Ji; Shuai Luo; Xingwang Zhang; Zhanguo Wang; Tao Yang
2016
Source PublicationNano Lett.
Volume16Issue:2Pages:877-882
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27677
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wenna Du,Xiaoguang Yang,Huayong Pan,et al. Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts[J]. Nano Lett.,2016,16(2):877-882.
APA Wenna Du.,Xiaoguang Yang.,Huayong Pan.,Xianghai Ji.,Haiming Ji.,...&Tao Yang.(2016).Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts.Nano Lett.,16(2),877-882.
MLA Wenna Du,et al."Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts".Nano Lett. 16.2(2016):877-882.
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