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Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures
Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
2018
Source PublicationJournal of Physics D: Applied Physics
Volume51Issue:34Pages:345102
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29168
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Huang Huolin;Sun Zhonghao;Cao Yaqing;Li Feiyu;Zhang Feng;Wen Zhengxin;Zhang Zifeng;Liang Yung C.;Hu Lizhong. Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures[J]. Journal of Physics D: Applied Physics,2018,51(34):345102.
APA Huang Huolin;Sun Zhonghao;Cao Yaqing;Li Feiyu;Zhang Feng;Wen Zhengxin;Zhang Zifeng;Liang Yung C.;Hu Lizhong.(2018).Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures.Journal of Physics D: Applied Physics,51(34),345102.
MLA Huang Huolin;Sun Zhonghao;Cao Yaqing;Li Feiyu;Zhang Feng;Wen Zhengxin;Zhang Zifeng;Liang Yung C.;Hu Lizhong."Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures".Journal of Physics D: Applied Physics 51.34(2018):345102.
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