SEMI OpenIR

Browse/Search Results:  1-1 of 1 Help

Selected(0)Clear Items/Page:    Sort:
Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
Authors:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
Adobe PDF(3034Kb)  |  Favorite  |  View/Download:3/0  |  Submit date:2019/11/15