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Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure 期刊论文
Electronics, 2019, 卷号: 8, 页码: 241
Authors:  Huolin Huang ;   Feiyu Li ;   Zhonghao Sun ;   Nan Sun ;   Feng Zhang ;   Yaqing Cao ;  Hui Zhang Pengcheng Tao
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Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
Authors:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
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