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Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Authors:  Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
SOLID-STATE ELECTRONICS, 2013, 卷号: 83, 页码: 66-70
Authors:  Wang, Lanxiang;  Su, Shaojian;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Guo, Pengfei;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Han, Genquan;  Yeo, Yee-Chia
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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Authors:  Gong, Xiao;  Han, Genquan;  Liu, Bin;  Wang, Lanxiang;  Wang, Wei;  Yang, Yue;  Kong, Eugene Yu-Jin;  Su, Shaojian;  Xue, Chunlai);  Cheng, Buwen;  Yeo, Yee-Chia
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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Authors:  Gong, Xiao;  Han, Genquan;  Bai, Fan;  Su, Shaojian;  Guo, Pengfei;  Yang, Yue;  Cheng, Ran;  Zhang, Dongliang;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Pan, Jisheng;  Zhang, Zheng;  Tok, Eng Soon;  Antoniadis, Dimitri;  Yeo, Yee-Chia
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Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs 期刊论文
Electrochemical and Solid-State Letters, 2012, 卷号: 15, 期号: 6, 页码: H179-H181
Authors:  Wang, Lanxiang;  Han, Genquan;  Su, Shaojian;  Zhou, Qian;  Yang, Yue;  Guo, Pengfei;  Wang, Wei;  Tong, Yi;  Lim, Phyllis Shi Ya;  Liu, Bin;  Kong, Eugene Yu-Jing;  Xue, Chunlai;  Wang, Qiming;  Cheng, Buwen;  Yeo, Yee-Chia
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Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Authors:  Wang LX (Wang, Lanxiang);  Su SJ (Su, Shaojian);  Wang W (Wang, Wei);  Yang Y (Yang, Yue);  Tong Y (Tong, Yi);  Liu B (Liu, Bin);  Guo PF (Guo, Pengfei);  Gong X (Gong, Xiao);  Zhang GZ (Zhang, Guangze);  Xue CL (Xue, Chunlai);  Cheng BW (Cheng, Buwen);  Han GQ (Han, Genquan);  Yeo YC (Yeo, Yee-Chia)
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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
Digest of Technical Papers - Symposium on VLSI Technology, 2012, 页码: 97-98
Authors:  Han, Genquan;  Su, Shaojian;  Wang, Lanxiang;  Zhang, Zheng;  Xue, Chunlai;  Cheng, Buwen;  Yeo, Yee-Chia;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Ivana;  Guo, Pengfei;  Guo, Cheng;  Zhang, Guangze;  Pan, Jisheng
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Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文
International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012, 页码: 6210151
Authors:  Wang, Lanxiang;  Han, Genquan;  Su, Shaojian;  Cheng, Buwen;  Yeo, Yee-Chia;  Zhou, Qian;  Yang, Yue;  Guo, Pengfei;  Wang, Wei;  Tong, Yi;  Lim, Phyllis Shi Ya;  Xue, Chunlai;  Wang, Qiming
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High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules 期刊论文
Technical Digest- International Electron Devices Meeting, IEDM, 2011, 页码: 16.7.1-16.7.3
Authors:  Han, Genquan;  Su, Shaojian;  Zhan, Chunlei;  Zhou, Qian;  Yang, Yue;  Wang, Lanxiang;  Guo, Pengfei;  Wei, Wang;  Wong, Choun Pei;  Shen, Ze Xiang;  Cheng, Buwen;  Yeo, Yee-Chia;  Han, G.
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Electron Devices  Germanium  Tin