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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia
2013
Source PublicationSOLID-STATE ELECTRONICS
Volume83Pages:66-70
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24288
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Wang, Lanxiang,Su, Shaojian,Wang, Wei,et al. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation[J]. SOLID-STATE ELECTRONICS,2013,83:66-70.
APA Wang, Lanxiang.,Su, Shaojian.,Wang, Wei.,Gong, Xiao.,Yang, Yue.,...&Yeo, Yee-Chia.(2013).Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation.SOLID-STATE ELECTRONICS,83,66-70.
MLA Wang, Lanxiang,et al."Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation".SOLID-STATE ELECTRONICS 83(2013):66-70.
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