SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
AlGaN/GaN背对背肖特基二极管氢气传感器
王新华; 王晓亮; 冯春; 冉军学; 肖红领; 杨翠柏; 王保柱; 王军喜
2008
Source Publication半导体学报
Volume29Issue:1Pages:153-156
Abstract通过溅射的方法制作了Pt/AIGaN/GaN背对背肖特基二极管并测试了该器件对氢气的响应.研究了Pt/AlGaN/GaN背对背肖特基二极管在25和100℃时对于10%H_2(N_2气中)的响应,计算了器件的灵敏度;并比较了两种温度条件下器件对于氢气响应的快慢;空气中的氧气对于器件电流的恢复有重要的作用;最后由热电子发射公式计算了器件在通人10%的氢气前后有效势垒高度的变化.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目(批准号;6 576 46)
Indexed ByCSCD
Language中文
CSCD IDCSCD:3205911
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16137
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王新华,王晓亮,冯春,等. AlGaN/GaN背对背肖特基二极管氢气传感器[J]. 半导体学报,2008,29(1):153-156.
APA 王新华.,王晓亮.,冯春.,冉军学.,肖红领.,...&王军喜.(2008).AlGaN/GaN背对背肖特基二极管氢气传感器.半导体学报,29(1),153-156.
MLA 王新华,et al."AlGaN/GaN背对背肖特基二极管氢气传感器".半导体学报 29.1(2008):153-156.
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