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Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Authors:  Wang, Baozhu;  Yan, Cuiying;  Wang, Xiaoliang;  Wang, B.(wangbz@semi.ac.cn)
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Atomic Force Microscopy  Gallium Nitride  Molecular Beam Epitaxy  Optical Materials  Optical Properties  Reflection High Energy Electron Diffraction  Sapphire  
一种对气体传感器或半导体器件性能进行测试的系统 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  王新华;  冯春;  王保柱;  马志勇;  王军喜;  胡国新;  肖红领;  冉军学;  王翠梅
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用MBE外延InAlGaN单晶薄膜的方法 专利
专利类型: 发明, 申请日期: 2008-01-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王保柱;  王晓亮;  王晓燕;  王新华;  肖红领;  王军喜;  刘宏新
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Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping  
The influence of internal electric fields on the transition energy of InGaN/gaN quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 522-526
Authors:  Guo LC (Guo Lunchun);  Wang XL (Wang Xiaoliang);  Xiao HL (Xiao Hongling);  Wang BZ (Wang Baozhu);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Computer Simulation  
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Authors:  Wang XY (Wang, Xiaoyan);  Wang XL (Wang, Xiaoliang);  Hu GX (Hu, Guoxin);  Wang BZ (Wang, Baozhu);  Ma ZY (Ma, Zhiyong);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Ran JX (Ran, Junxue);  Li JP (Li, Jianping);  Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xywang@mail.semi.ac.cn
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Alxga1-xn  
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Authors:  Wang XY (Wang Xiaoyan);  Wang XL (Wang Xiaoliang);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li AN (Li Antnin);  Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Molecular-beam Epitaxy  
GaN基UV-LED材料生长和特性研究 学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:  王保柱
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High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
Authors:  Wang, XY (Wang, Xiaoyan);  Wang, XL (Wang, Xiaoliang);  Wang, BZ (Wang, Baozhu);  Xiao, HL (Xiao, Hongling);  Liu, HX (Liu, Hongxin);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Buffer Layer  Stress  Photodiodes  Reduction  Detectors  Sapphire  Epitaxy  Growth