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Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
Li, Zhicong; Li, Panpan; Wang, Bing; Li, Hongjian; Liang, Meng; Yao, Ran; Li, Jing; Deng, Yuanming; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin; Li, Z.(lizc@semi.ac.cn)
2011
Source PublicationIEEE International Conference on Group IV Photonics GFP
ISSN16744926
Volume32Issue:11Pages:114007
AbstractThrough insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes(LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared.6.8% Al composition in the stacks showed the highest electrostatic discharge(ESD) endurance ability at the human body mode up to6000 V and the pass yield exceeded95%.?2011 Chinese Institute of Electronics.
metadata_83中科院半导体照明研发中心
KeywordDiodes Electrostatic Devices Electrostatic Discharge Gallium Alloys Gallium Nitride Light Emission
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23145
Collection中科院半导体照明研发中心
Corresponding AuthorLi, Z.(lizc@semi.ac.cn)
Recommended Citation
GB/T 7714
Li, Zhicong,Li, Panpan,Wang, Bing,et al. Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer[J]. IEEE International Conference on Group IV Photonics GFP,2011,32(11):114007.
APA Li, Zhicong.,Li, Panpan.,Wang, Bing.,Li, Hongjian.,Liang, Meng.,...&Li, Z..(2011).Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer.IEEE International Conference on Group IV Photonics GFP,32(11),114007.
MLA Li, Zhicong,et al."Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer".IEEE International Conference on Group IV Photonics GFP 32.11(2011):114007.
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