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Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 064202
Authors:  Wu J;  Lu XQ;  Jin P;  Meng XQ;  Wang ZG
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Light-emitting-diodes  Optical-properties  Tuning Range  Nm  Emission  Spectrum  Spectroscopy  
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 018104
Authors:  Lu XQ;  Jin P;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: pengjin@red.semi.ac.cn
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Quantum-dot  Tunable Laser  External Cavity  Broadband Tuning  Nm Tuning Range  Superluminescent Diodes  Light-source  Well Laser  Spectroscopy  Spectrum  
Broadband external cavity tunable quantum dot lasers with low injection current density 期刊论文
OPTICS EXPRESS, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
Authors:  Lv XQ;  Jin P;  Wang WY;  Wang ZG;  Lv, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
Adobe PDF(874Kb)  |  Favorite  |  View/Download:1269/540  |  Submit date:2010/05/24
Light-emitting-diodes  Nm Tuning Range  Superluminescent Diodes  Well Laser  Emission  Spectroscopy  Spectrum  
InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth 期刊论文
ELECTRONICS LETTERS, 2005, 卷号: 41, 期号: 25, 页码: 1400-1402
Authors:  Liu N;  Jin P;  Wang ZG;  Liu, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn
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Spectrum  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
Authors:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Spectrum  
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:  Zhang ZY;  Meng XQ;  Jin P;  Li CM;  Qu SC;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)  |  Favorite  |  View/Download:989/369  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Quantum Dots  Strain  Molecular Beam Epitaxy  Superluminescent Diodes  1.3 Mu-m  High-power  Integrated Absorber  Inas Islands  Spectrum  Window  Layer  Size