SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth
Liu N; Jin P; Wang ZG; Liu, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn
2005
Source PublicationELECTRONICS LETTERS
ISSN0013-5194
Volume41Issue:25Pages:1400-1402
AbstractBroadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as an active region. The devices exhibited properties of 110 run bandwidth with the centre of 1.1 mu m and above 30 mW output under pulse injection at room temperature.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordSpectrum
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10906
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn
Recommended Citation
GB/T 7714
Liu N,Jin P,Wang ZG,et al. InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth[J]. ELECTRONICS LETTERS,2005,41(25):1400-1402.
APA Liu N,Jin P,Wang ZG,&Liu, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn.(2005).InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth.ELECTRONICS LETTERS,41(25),1400-1402.
MLA Liu N,et al."InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth".ELECTRONICS LETTERS 41.25(2005):1400-1402.
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