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Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  Favorite  |  View/Download:901/319  |  Submit date:2010/11/15
Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density  
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
Authors:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(222Kb)  |  Favorite  |  View/Download:890/275  |  Submit date:2010/08/12
Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density  
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 卷号: 19, 期号: 1, 页码: 197-201
Authors:  Jiang WH;  Xu HZ;  Xu B;  Zhou W;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(818Kb)  |  Favorite  |  View/Download:973/302  |  Submit date:2010/08/12
Oriented Gaas  Inas Islands  High-index  Surfaces  Temperature  Topography  Strain  Laser