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Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Molecular-beam Epitaxy  Phase Epitaxy  Quantum Dots  Band-gap  Growth  Surfaces  
Enhanced infrared absorption of spatially ordered quantum dot arrays 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2007, 卷号: 50, 期号: 2-3, 页码: 162-165
Authors:  Ma WQ;  Sun YW;  Yang XJ;  Chong M;  Jiang DS;  Chen LH;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqma@semi.ac.cn
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Quantum Dots  
Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073517
Authors:  Lu SL;  Jiang DS;  Dai JM;  Yang CL;  He HT;  Ge WK;  Wang JN;  Chang K;  Zhang JY;  Shen DZ;  Wang, JN, Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Hong Kong, Peoples R China. E-mail: phjwang@ust.hk
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Quantum Dots  Exchange Interaction  Magnetic-fields  Zn1-xmnxse  Znmnse  Excitons  
Lasing of CdSSe quantum dots in glass spherical microcavity 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 卷号: 17, 期号: 1-4, 页码: 453-455
Authors:  Lu SL;  Jia R;  Jiang DS;  Li SS;  Jiang DS,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Spherical Microcavity  Quantum Dots  Lasing  
Strain effect on the band structure of InAs/GaAs quantum dots 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 卷号: 38, 期号: 11, 页码: 6264-6265
Authors:  Zhu HJ;  Feng SL;  Jiang DS;  Deng YM;  Wang HL;  Zhu HJ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Inas/gaas  Quantum Dots  Photoluminescence  Band Structure  Gaas  Relaxation  Temperature  
Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 1998, 卷号: 41, 期号: 2, 页码: 172-176
Authors:  Wang YT;  Zhuang Y;  Ma WQ;  Wang W;  Yang XP;  Chen ZG;  Jiang DS;  Zheng HZ;  Wang YT,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(313Kb)  |  Favorite  |  View/Download:965/341  |  Submit date:2010/08/12
Quantum Dots  X-ray Diffraction  Growth  Dynamic Theory  Photoluminescence  Molecular-beam Epitaxy  Resolution  Gaas(100)  Gaas