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Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Yang XP;  Deng YM;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Han PD;  Wang FL;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2139Kb)  |  收藏  |  浏览/下载：1231/149  |  提交时间：2010/11/15
Gaas  Growth  
Material transport in self-assembled InAs/GaAs quantum dot ensemble 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Yang XP;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Wang FL;  Gao M;  Han PD;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2906Kb)  |  收藏  |  浏览/下载：1291/171  |  提交时间：2010/11/15
Growth  Transition  Gaas  
Heteroepitaxy of cubic GaN: influence of interface structure 会议论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), OXFORD, ENGLAND, APR 07-10, 1997
作者:  Trampert A;  Brandt O;  Yang H;  Yang B;  Ploog KH;  Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
Adobe PDF(317Kb)  |  收藏  |  浏览/下载：1238/219  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Gan/gaas(001)  Growth