SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Material transport in self-assembled InAs/GaAs quantum dot ensemble
Wang ZM; Feng SL; Yang XP; Lu ZD; Xu ZY; Chen ZG; Zheng HZ; Wang FL; Gao M; Han PD; Duan XF; Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
1997
Conference Name10th International Conference on Superlattices, Microstructures and Microdevices
Source PublicationPHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12
Pages205-211
Conference DateJUL 08-11, 1997
Conference PlaceLINCOLN, NEBRASKA
Publication PlaceBOX 11, 105523 MOSCOW, RUSSIA
PublisherV S V CO. LTD
ISSN0204-3467
AbstractIntroducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.
metadata_83chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, electron microscopy lab, beijing 100083, peoples r china
KeywordGrowth Transition Gaas
Funding OrganizationUnivv Nebraska, Coll Engn.; Ctr Mat Res & Anal.
Subject Area半导体物理
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15089
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Wang ZM,Feng SL,Yang XP,et al. Material transport in self-assembled InAs/GaAs quantum dot ensemble[C]. BOX 11, 105523 MOSCOW, RUSSIA:V S V CO. LTD,1997:205-211.
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