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Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1433/261  |  提交时间：2010/03/29
Lateral Intersubband Photocurrent  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文
JOURNAL OF LUMINESCENCE, Shanghai, PEOPLES R CHINA, AUG 01-05, 2005
作者:  Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC;  Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
Adobe PDF(269Kb)  |  收藏  |  浏览/下载：1672/293  |  提交时间：2010/03/29
Quantum Dots  
A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier 会议论文
2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS丛书标题: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, PEOPLES R CHINA, DEC 19-21, 2005
作者:  Chen HD (Chen Hongda);  Gu M (Gu Ming);  Huang JL (Huang Jiale);  Gao P (Gao Peng);  Mao LH (Mao Luhong);  Chen, HD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(1988Kb)  |  收藏  |  浏览/下载：1250/208  |  提交时间：2010/03/29
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Peng CS;  Chen H;  Zhao ZY;  Li JH;  Dai DY;  Huang Q;  Zhou JM;  Zhang YH;  Tung CH;  Sheng TT;  Wang J;  Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1477/311  |  提交时间：2010/11/15
Threading Dislocation  Si(100)  Layers  Films