SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
Wang FZ; Chen ZH; Sun J; Bai LH; Huang SH; Xiong H; Jin P; Wang ZG; Shen SC; Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
2006
Conference Name15th International Conferene on Dynamical Processes in Excited States of Solids
Source PublicationJOURNAL OF LUMINESCENCE
Pages119: 183-187
Conference DateAUG 01-05, 2005
Conference PlaceShanghai, PEOPLES R CHINA
Publication PlacePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
PublisherELSEVIER SCIENCE BV
ISSN0022-2313
metadata_83fudan univ, dept phys, surface phys lab, shanghai 200433, peoples r china; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
AbstractWe have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.
KeywordQuantum Dots
Subject Area半导体材料
Funding OrganizationNatl Nat Sci Fdn China.; Sci & Technol Commiss Shanghai Municipal.; Chinese Phys Soc.; Shanhai Phys Soc.; Chinese Luminescence Soc.; Surface Phys Lab.; Fudan Univ, Phys Dept & Synchrotron Radiat Res Ctr.; Univ Sci & Technol China, Natl Synchrotron Radiat Lab.; Natl Lab Infrared Phys, Shanghai Inst Tech Phys.; Changchun Inst Opt, Key Lab. Fudan Univ
Indexed ByCPCI(ISTP)
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10034
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
Recommended Citation
GB/T 7714
Wang FZ,Chen ZH,Sun J,et al. Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:119: 183-187.
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