Knowledge Management System Of Institute of Semiconductors,CAS
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots | |
Wang FZ; Chen ZH; Sun J; Bai LH; Huang SH; Xiong H; Jin P![]() | |
2006 | |
Conference Name | 15th International Conferene on Dynamical Processes in Excited States of Solids |
Source Publication | JOURNAL OF LUMINESCENCE |
Pages | 119: 183-187 |
Conference Date | AUG 01-05, 2005 |
Conference Place | Shanghai, PEOPLES R CHINA |
Publication Place | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Publisher | ELSEVIER SCIENCE BV |
ISSN | 0022-2313 |
metadata_83 | fudan univ, dept phys, surface phys lab, shanghai 200433, peoples r china; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
Abstract | We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved. |
Keyword | Quantum Dots |
Subject Area | 半导体材料 |
Funding Organization | Natl Nat Sci Fdn China.; Sci & Technol Commiss Shanghai Municipal.; Chinese Phys Soc.; Shanhai Phys Soc.; Chinese Luminescence Soc.; Surface Phys Lab.; Fudan Univ, Phys Dept & Synchrotron Radiat Res Ctr.; Univ Sci & Technol China, Natl Synchrotron Radiat Lab.; Natl Lab Infrared Phys, Shanghai Inst Tech Phys.; Changchun Inst Opt, Key Lab. Fudan Univ |
Indexed By | CPCI(ISTP) |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/10034 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn |
Recommended Citation GB/T 7714 | Wang FZ,Chen ZH,Sun J,et al. Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:119: 183-187. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
2400.pdf(269KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment