Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
	Wang FZ; Chen ZH; Sun J; Bai LH; Huang SH; Xiong H; Jin P; Wang ZG; Shen SC; Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
	2006
会议名称	15th International Conferene on Dynamical Processes in Excited States of Solids
会议录名称	JOURNAL OF LUMINESCENCE
页码	119: 183-187
会议日期	AUG 01-05, 2005
会议地点	Shanghai, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-2313
部门归属	fudan univ, dept phys, surface phys lab, shanghai 200433, peoples r china; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.
关键词	Quantum Dots
学科领域	半导体材料
主办者	Natl Nat Sci Fdn China.; Sci & Technol Commiss Shanghai Municipal.; Chinese Phys Soc.; Shanhai Phys Soc.; Chinese Luminescence Soc.; Surface Phys Lab.; Fudan Univ, Phys Dept & Synchrotron Radiat Res Ctr.; Univ Sci & Technol China, Natl Synchrotron Radiat Lab.; Natl Lab Infrared Phys, Shanghai Inst Tech Phys.; Changchun Inst Opt, Key Lab. Fudan Univ
收录类别	CPCI（ISTP）
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10034
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
推荐引用方式 GB/T 7714	Wang FZ,Chen ZH,Sun J,et al. Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:119: 183-187.

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