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Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7A 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 8, 页码: 082405
Authors:  Misuraca, J;  Kim, JI;  Lu, J;  Meng, KK;  Chen, L;  Yu, XZ;  Zhao, JH;  Xiong, P;  von Molnar, S
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Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 7, 页码: 072404
Authors:  Yu, J. L.;  Chen, Y. H.;  Liu, Y.;  Jiang, C. Y.;  Ma, H.;  Zhu, L. P.;  Qin, X. D.
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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 25, 页码: 252110
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Li ZC (Li, Z. C.);  Fan YM (Fan, Y. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.)
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Quadratic electro-optic effect in GaN-based materials 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 161901
Authors:  Chen, P;  Zhao, DG;  Zuo, YH;  Jiang, DS;  Liu, ZS;  Wang, QM
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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
Co doping enhanced giant magnetocaloric effect in Mn1-xCoxAs films epitaxied on GaAs (001) 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 4, 页码: Art. No. 042502
Authors:  Xu PF (Xu P. F.);  Nie SH (Nie S. H.);  Meng KK (Meng K. K.);  Wang SL (Wang S. L.);  Chen L (Chen L.);  Zhao JH (Zhao J. H.)
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Cobalt Compounds  Doping  Entropy  Gallium Arsenide  Magnetic Epitaxial Layers  Magnetocaloric Effects  Manganese Compounds  Molecular Beam Epitaxial Growth  
Lattice polarity detection of InN by circular photogalvanic effect 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 3, 页码: Art. No. 031902
Authors:  Zhang Q;  Wang XQ;  He XW;  Yin CM;  Xu FJ;  Shen B;  Chen YH;  Wang ZG;  Ishitani Y;  Yoshikawa A;  Zhang Q Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China. E-mail Address: wangshi@pku.edu.cn;  bshen@pku.edu.cn
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Iii-v Semiconductors  Indium Compounds  Nondestructive Testing  Photoconductivity  Radiation Effects  Semiconductor Thin Films  Wide Band Gap Semiconductors  
Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 16, 页码: Art. No. 161112
Authors:  Chen P;  Zuo YH;  Tu XG;  Cai DJ;  Li SP;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: pchen@semi.ac.cn
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Mach-zehnder Interferometer  
Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.031103
Authors:  Chen P;  Tu XG;  Li SP;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Zuo YH;  Zhao L;  Chen SW;  Yu YD;  Yu, JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: pchen@semi.ac.cn
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Quantum-wells  
Evolution of InAs nanostructures grown by droplet epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.033112
Authors:  Zhao C;  Chen YH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum Dots