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Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:  Sun J;  Jin P;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
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Gaas  Spectroscopy  Parameters  Transport  Lasers  Energy  States  Hole  
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:  Yu LK;  Xu B;  Wang ZG;  Chen YH;  Jin P;  Zhao C;  Sun J;  Ding F;  Hu LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
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Growth Interruption  In Segregation  Surface Oxide  Molecular Beam Epitaxy  Quantum Dots  Molecular-beam Epitaxy  Gaas  Photoluminescence  Layer  Shape  Size  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 期刊论文
JOURNAL OF LUMINESCENCE, 2006, 卷号: 119, 期号: 0, 页码: 183-187
Authors:  Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC;  Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. E-mail: zhanghai@fudan.edu.cn
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Quantum Dots  Exciton  Photoluminescence  
Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 7, 页码: Art.No.071903
Authors:  Chen YH;  Sun J;  Jin P;  Wang ZG;  Yang Z;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Growth  Inas  Gaas  Surfaces  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文
JOURNAL OF LUMINESCENCE, Shanghai, PEOPLES R CHINA, AUG 01-05, 2005
Authors:  Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC;  Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
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Quantum Dots  
Observation of intershell and hybridized energy states in InAs/GaAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 9, 页码: Art.No.093104
Authors:  Wang FZ;  Chen ZH;  Bai LH;  Huang SH;  Xiong H;  Shen SC;  Sun J;  Jin P;  Wang ZG;  Wang, FZ, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
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Optical-properties  
Research progress of electronic properties of self-assembled semiconductor quantum dots 期刊论文
ACTA METALLURGICA SINICA, 2005, 卷号: 41, 期号: 5, 页码: 463-470
Authors:  Sun J;  Jin P;  Wang ZG;  Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: albertjefferson@sohu.com
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Self-assembled Semiconductor Quantum Dot  
自组装半导体量子点的电子学性质研究进展 期刊论文
金属学报, 2005, 卷号: 41, 期号: 5, 页码: 463-470
Authors:  孙捷;  金鹏;  王占国
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