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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  M. Shi;  D.M. Zhao;  X. Li;  J.P. Liu;  S.M. Zhang;  H. Wang;  H. Yang
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The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
Authors:  P. Chen;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  J. Yang;  X. Li;  L. Q. Zhang;  J.P. Liu;  S.M. Zhang;  H. Yang
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Saturation of the junction voltage in GaN-based laser diodes 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 18, 页码: 183509
Authors:  Feng, M.X.;  Liu, J.P.;  Zhang, S.M.;  Liu, Z.S.;  Jiang, D.S.;  Li, Z.C.;  Wang, F.;  Li, D.Y.;  Zhang, L.Q.;  Wang, H.;  Yang, H.
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Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 11, 页码: 1050
Authors:  Lin YX(林燕霞);  Huang DD(黄大定);  Zhang XL(张秀兰);  Liu JP(刘金平);  Li JP(李建平);  Gao F(高飞);  Sun DZ(孙殿照);  Ceng YP(曾一平);  Kong MY(孔梅影)
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Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys 期刊论文
Rare Metals, 1997, 卷号: 16, 期号: 2, 页码: 122
Authors:  Liu XF(刘学锋);  Li JP(李建平);  Sun DZ(孙殿照)
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