SEMI OpenIR  > 集成光电子学国家重点实验室
Saturation of the junction voltage in GaN-based laser diodes
Feng, M.X.; Liu, J.P.; Zhang, S.M.; Liu, Z.S.; Jiang, D.S.; Li, Z.C.; Wang, F.; Li, D.Y.; Zhang, L.Q.; Wang, H.; Yang, H.
2013
Source PublicationApplied Physics Letters
Volume102Issue:18Pages:183509
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24914
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Feng, M.X.,Liu, J.P.,Zhang, S.M.,et al. Saturation of the junction voltage in GaN-based laser diodes[J]. Applied Physics Letters,2013,102(18):183509.
APA Feng, M.X..,Liu, J.P..,Zhang, S.M..,Liu, Z.S..,Jiang, D.S..,...&Yang, H..(2013).Saturation of the junction voltage in GaN-based laser diodes.Applied Physics Letters,102(18),183509.
MLA Feng, M.X.,et al."Saturation of the junction voltage in GaN-based laser diodes".Applied Physics Letters 102.18(2013):183509.
Files in This Item:
File Name/Size DocType Version Access License
Saturation of the ju(576KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Feng, M.X.]'s Articles
[Liu, J.P.]'s Articles
[Zhang, S.M.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Feng, M.X.]'s Articles
[Liu, J.P.]'s Articles
[Zhang, S.M.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Feng, M.X.]'s Articles
[Liu, J.P.]'s Articles
[Zhang, S.M.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.