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Theoretical and Experimental Studies of an Ultra-compact Photonic Crystal Corner Mirror Based on Silicon-On-Insulator 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Yu, JZ;  Yu, HJ;  Zhu, Y;  Yu, YD;  Yu, JZ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(825Kb)  |  收藏  |  浏览/下载：1217/262  |  提交时间：2010/03/09
Guide  Bend  
SiGe/Si quantum well resonant-cavity-enhanced photodetector 会议论文
TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II, 4111, SAN DIEGO, CA, JUL 31-AUG 02, 2000
作者:  Li C;  Yang QQ;  Wang HJ;  Zhu JL;  Luo LP;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(615Kb)  |  收藏  |  浏览/下载：1666/274  |  提交时间：2010/10/29
Rce Photodetector  Sige/si  Simox  Bragg Reflector  
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)  |  收藏  |  浏览/下载：1146/204  |  提交时间：2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Li C;  Yang QQ;  Wang HJ;  Cheng BW;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China.
Adobe PDF(403Kb)  |  收藏  |  浏览/下载：1127/232  |  提交时间：2010/11/15
Circular Waveguide Photodetector  Responsivity  Quantum Efficiency  Sige/si Mqw  1.3 Mu-m  
Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Cheng BW;  Li C;  Yang QQ;  Wang HJ;  Luo LP;  Yu JZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(176Kb)  |  收藏  |  浏览/下载：1145/229  |  提交时间：2010/10/29
Sige/si  Mqws  Photodetector  1.3 Mu-m  Si/sio2