中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共7条，第1-7条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文
MATERIALS RESEARCH, Chongqing, PEOPLES R CHINA, JUN 09-12, 2008
作者:  Zhao L;  Lu ZX;  Cheng CJ;  Zhao DG;  Zhu JJ;  Sun BJ;  Qu B;  Zhang XF;  Sun WG;  Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
Adobe PDF(392Kb)  |  收藏  |  浏览/下载：1617/344  |  提交时间：2010/03/09
Alxga1-xn  
Tight-banding Approach for Phonic Crystal Coupled-cavity-mode Estimation 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 72-73 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Sun H (Sun Hui);  Jiang B (Jiang Bin);  Chen W (Chen Wei);  Zhou WJ (Zhou Wenjun);  Xing MX (Xing Minxin);  Liu AJ (Liu Anjin);  Zheng WH (Zheng Wanhua)
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：1513/225  |  提交时间：2011/07/14
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao C;  Chen YH;  Zhao M;  Zhang CL;  Xu B;  Yu LK;  Sun J;  Lei W;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：1697/335  |  提交时间：2010/03/29
Monte Carlo Simulation  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1710/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Microwave packaging for 10 Gb/s EML modulators - art. no. 60201O 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Liu, Y;  Xie, L;  Yuan, HQ;  Zhang, JB;  Zhu, NH;  Sun, CZ;  Xiong, B;  Luo, B;  Liu, Y, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(460Kb)  |  收藏  |  浏览/下载：1458/414  |  提交时间：2010/03/29
Optoelectronic Devices  Electro-absorption Modulators  Microwave Packaging  Frequency Response  Design  
Self-assembled InAs quantum wires on InP(001) 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:  Wu J;  Zeng YP;  Sun ZZ;  Lin F;  Xu B;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(359Kb)  |  收藏  |  浏览/下载：1213/239  |  提交时间：2010/11/15
Short-period Superlattices  Vapor-phase Epitaxy  Gaas  Islands  State  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)  |  收藏  |  浏览/下载：1398/262  |  提交时间：2010/11/15
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers