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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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收藏
  |  
浏览/下载:1876/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D
会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:
Wang, L
;
Zhao, LJ
;
Chen, WX
;
Pan, JQ
;
Zhou, F
;
Zhu, HL
;
Wang, W
;
Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(737Kb)
  |  
收藏
  |  
浏览/下载:1609/408
  |  
提交时间:2010/03/09
Photonic Integrated Circuit
Y-branch
Superluminescent Diode
Bundle Integrated Guide
Far Field Pattern
Reactive Ion Etching
Study of infrared luminescence from Er-implanted GaN films
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
;
Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)
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收藏
  |  
浏览/下载:1289/325
  |  
提交时间:2010/11/15
Doping
Metalorganic Chemical Vapor Deposition
Molecular Beam Epitaxy
Gallium Compounds
Semiconducting Gallium Compounds
Erbium
High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
;
Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)
  |  
收藏
  |  
浏览/下载:1726/427
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Ion-scattering Spectroscopy
Lattice Polarity
Single-crystals
Films
Polarization
Gan(0001)
Surfaces
Growth
Diodes
Nano-layer structure of silicon-on-insulator materials
会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:
Wang X
;
Chen M
;
Chen J
;
Dong YN
;
Liu XH
;
He P
;
Tian LL
;
Liu ZL
;
Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
Adobe PDF(1181Kb)
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收藏
  |  
浏览/下载:1189/242
  |  
提交时间:2010/11/15
Soi
Nanostructure
Microelectronic Materials
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:
Jiang DS
;
Liang XG
;
Sun BQ
;
Bian L
;
Li LH
;
Pan Z
;
Wu RG
;
Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)
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收藏
  |  
浏览/下载:1355/283
  |  
提交时间:2010/10/29
Luminescence
Localization
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Zhang W
;
Pan Z
;
Li LH
;
Zhang RK
;
Lin YW
;
Wu RG
;
Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1037/0
  |  
提交时间:2010/10/29
Gainnas
Photodetector
Resonant Cavity Enhanced
High Speed Property
Molecular-beam Epitaxy
Schottky Photodiodes
Performance
Efficiency
Operation
Bandwidth
Design
Si
A novel high sensitivity CE-PTHPT for optical fiber communication
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Guohui L
;
Yang R
;
Dejun H
;
Chengzhou J
;
Shucheng D
;
Eenjun Z
;
YiPing Z
;
Junming Z
;
Guohui L Beijing Normal Univ Inst Low Energy Nucl Phys Key Lab Beam Technol & Mat Modificat Beijing 100875 Peoples R China.
Adobe PDF(58Kb)
  |  
收藏
  |  
浏览/下载:1297/351
  |  
提交时间:2010/10/29
Phototransistors
Optical Fiber Communication
Gaas
Inp
Heterojunction Phototransistor
High-gain
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
;
Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)
  |  
收藏
  |  
浏览/下载:1198/219
  |  
提交时间:2010/11/15
Adsorption
Characterization
Radiation
Molecular Beam Epitaxy
Nitrides
Surface-emitting Laser
Quantum-wells
Operation
Range
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Li LH
;
Pan Z
;
Zhang W
;
Lin YW
;
Wang XY
;
Wu RH
;
Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)
  |  
收藏
  |  
浏览/下载:1392/268
  |  
提交时间:2010/11/15
Characterization
Defects
X-ray Diffraction
Molecular Beam Epitaxy
Nitrides
Gaas