Nano-layer structure of silicon-on-insulator materials

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Nano-layer structure of silicon-on-insulator materials
	Wang X; Chen M; Chen J; Dong YN; Liu XH; He P; Tian LL; Liu ZL; Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
	2003
会议名称	11th Seoul International Symposium on the Physics of Semiconductors and Applications
会议录名称	JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42
页码	S713-S718
会议日期	AUG 20-23, 2002
会议地点	SEOUL, SOUTH KOREA
出版地	635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
出版者	KOREAN PHYSICAL SOC
ISSN	0374-4884
部门归属	chinese acad sci, shanghai inst microsyst & informat technol, ion beam lab, shanghai 200050, peoples r china; tsing hua univ, inst microelect, beijing 100084, peoples r china; chinese acad sci, beijing inst semicond, beijing 100864, peoples r china
摘要	Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.
关键词	Soi Nanostructure Microelectronic Materials
学科领域	半导体材料
主办者	AIXTRON AG.; Epichem Inc.; KODENSHI AUK.; LG Electr Inst Technol.; LUXPIA Co Ltd.; Natl Program Tera Level Nanodevices.; Thomas Swan Sci Equipment Ltd.; Kyung Hee Univ, Adv Display Res Ctr.; Sungkyunkwan Univ, Ctr Nanotubes & Nanostruct Composites.; Dongguk Univ, Quantum Funct Semiconductor Res Ctr.; Chonbuk Natl Univ, Semiconductor Phys Res Ctr.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14857
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
推荐引用方式 GB/T 7714	Wang X,Chen M,Chen J,et al. Nano-layer structure of silicon-on-insulator materials[C]. 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA:KOREAN PHYSICAL SOC,2003:S713-S718.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2823.pdf（1181KB）			限制开放	--	请求全文