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Interfacial electronic structure-modulated magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 9, 页码: 092402
Authors:  Chen, X;  Wang, KY;  Wu, ZL;  Jiang, SL;  Yang, G;  Liu, Y;  Teng, J;  Yu, GH
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Design and fabrication of SiO2/Si3N4 dielectric distributed Bragg reflectors for ultraviolet optoelectronic applications 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 8, 页码: 87802
Authors:  Li, ZC;  Liu, B;  Zhang, R;  Zhang, Z;  Tao, T;  Xie, ZL;  Chen, P;  Jiang, RL;  Zheng, YD;  Ji, XL
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
针对多模式逻辑单元可编程门阵列的工艺映射方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:  张 琨;  周华兵;  陈陵都;  刘忠立
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一种可重构的乘法器 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  余洪敏;  陈陵都;  刘忠立
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Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Authors:  Liu B;  Zhang Z;  Zhang R;  Fu DY;  Xie ZL;  Lu H;  Schaff WJ;  Song LH;  Cui YC;  Hua XM;  Han P;  Zheng YD;  Chen YH;  Wang ZG;  Zhang, R, Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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Band-gap  Temperature-dependence  Energy  Semiconductors  Spectra  Epitaxy  Growth  Layers  
Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文
APPLIED PHYSICS EXPRESS, 2010, 卷号: 3, 期号: 7, 页码: Art. No. 072001
Authors:  Huang ZL (Huang Zengli);  Wang JF (Wang Jianfeng);  Liu ZH (Liu Zhenghui);  Xu K (Xu Ke);  Yang H (Yang Hui);  Cao B (Cao Bing);  Han Q (Han Qin);  Zhang GJ (Zhang Guiju);  Wang CH (Wang Chinhua);  Wang, JF, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: jfwang2006@sinano.ac.cn
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Light-emitting-diodes  
基于MEMS工艺技术的无线网络压力传感器芯片设计及应用研究 期刊论文
电子技术应用, 2010, 卷号: 36, 期号: 7, 页码: 13-16
Authors:  郭源生;  刘忠立
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改进的部分耗尽绝缘体上硅静态随机存储器存储单元 专利
专利类型: 发明, 申请日期: 2009-05-27, 公开日期: 3996
Inventors:  赵 凯;  刘忠立;  于 芳
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