中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共109条，第1-10条 帮助

限定条件                    
已选(0)清除 条数/页：   排序方式：
A Novel CMOS Color Pixel for Vision Chips 会议论文
, Christchurch, NEW ZEALAND, 2009
作者:  Fu QY (Fu Qiuyu);  Zhang WC (Zhang Wancheng);  Lin QY (Lin Qingyu);  Wu NJ (Wu Nanjian);  Fu, QY, Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China
Adobe PDF(931Kb)  |  收藏  |  浏览/下载：2617/513  |  提交时间：2010/08/16
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1888/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Li ZY;  Zhu Y;  Zhou L;  Li YT;  Han WH;  Fan ZC;  Yu YD;  Yu JZ;  Li, ZY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(227Kb)  |  收藏  |  浏览/下载：1988/455  |  提交时间：2010/06/04
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1741/433  |  提交时间：2010/03/09
Algan/gan Hemts  
Characteristics of triangle and square InP/InGaAsP microlasers 会议论文
ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, Athens, GREECE, JUN 22-26, 2008
作者:  Huang YZ;  Wang SJ;  Che KJ;  Hu YH;  Du Y;  Yu LJ;  Huang, YZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1528/252  |  提交时间：2010/03/09
Semiconductor Lasers  
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1599/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Geng, MM;  Jia, LX;  Zhang, L;  Yang, L;  Liu, YL;  Li, F;  Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(607Kb)  |  收藏  |  浏览/下载：1651/309  |  提交时间：2010/03/09
Wave-guides  Devices  Design  
Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Li, Y;  Yang, FH;  Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(267Kb)  |  收藏  |  浏览/下载：1414/372  |  提交时间：2010/03/09
Bulge Test  Fracture Property  Silicon Nitride  Weibull Distribution Function  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：2007/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(386Kb)  |  收藏  |  浏览/下载：1708/355  |  提交时间：2010/03/09
Pockels Effect