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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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High speed silicon optical switches based on carrier depletion - art. no. 67812D
会议论文
PASSIVE COMPONENTS AND FIBER-BASED DEVICES IV, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:
Li ZY
;
Yu JZ
;
Chen SW
;
Wang QM
;
Li, ZY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(511Kb)
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浏览/下载:1577/276
  |  
提交时间:2010/03/09
Optical Switches
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)
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浏览/下载:1358/203
  |  
提交时间:2010/03/29
Homoepitaxial Growth
Low-pressure Hot-wall Cvd
Structural And Optical Characteristics
Intentional Doping
Schottky Barrier Diodes
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Zeng, XB
;
Liao, XB
;
Dai, ST
;
Wang, B
;
Xu, YY
;
Xiang, XB
;
Hu, ZH
;
Diao, HW
;
Kong, GL
;
Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)
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浏览/下载:1699/241
  |  
提交时间:2010/03/29
Chemical Vapor Deposition Processes
Nanomaterials
Semiconducting Silicon
Visible Photoluminescence
Porous Silicon
Amorphous-silicon
Si
Spectroscopy
Films
Nanostructures
Confinement
Growth
Electronic structure and optical property of semiconductor nanocrystallites
会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Xia JB
;
Chang K
;
Li SS
;
Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)
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浏览/下载:1138/297
  |  
提交时间:2010/11/15
Semiconductor Cluster
Self-assembled Quantum Dot
Diluted Magnetic Semiconductor
Electronic Structure
Resonant Tunneling
Quantum Dots
Exciton-states
Spheres
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)
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浏览/下载:1284/312
  |  
提交时间:2010/03/29
Deep-level Defects
Fe-doped Inp
Grown Inp
Spectroscopy
Resonance
Wafer
Strong red light emission from silicon nanocrystals embedded in SIO2 matrix
会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:
Chen WD
;
Wang YQ
;
Chen CY
;
Diao HW
;
Liao XB
;
Kong GL
;
Hsu CC
;
Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)
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收藏
  |  
浏览/下载:1288/291
  |  
提交时间:2010/10/29
Photoluminescence
Luminescence
Spectroscopy
Deposition
Electronic characteristics of InAs self-assembled quantum dots
会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
;
Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)
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  |  
浏览/下载:1136/237
  |  
提交时间:2010/11/15
Inas/gaas Quantum Dots
Self-assembled Structure
Dlts
Pl
Band Offset
Energy-levels
Carrier Relaxation
Spectroscopy
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
;
Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)
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收藏
  |  
浏览/下载:1019/186
  |  
提交时间:2010/11/15
Electronic-structure
Carrier Relaxation
Energy-levels
Spectroscopy
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Wang JN
;
Sun BQ
;
Wang XR
;
Wang YQ
;
Ge WK
;
Jiang DS
;
Wang HL
;
Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)
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  |  
浏览/下载:1301/271
  |  
提交时间:2010/11/15
Superlattices
Gaas/alas
Electric Field Domains
Tunnelling
Oscillations
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells
会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:
Yu GH
;
Fan XW
;
Guan ZP
;
Zhang JY
;
Zhao XW
;
Shen DZ
;
Zheng ZH
;
Yang BJ
;
Jiang DS
;
Chen YB
;
Zhu ZM
;
Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
Adobe PDF(134Kb)
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  |  
浏览/下载:1471/239
  |  
提交时间:2010/11/15
Double Multi-quantum Wells
Photocurrent Spectra
Zncdse-znse
Spectroscopy
Photoluminescence
Heterostructures
Photodetectors