Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ; Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
2004
会议名称13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议录名称SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials
页码15-18
会议日期SEP 20-25, 2004
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN0-7803-8668-X
部门归属chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.
关键词Deep-level Defects Fe-doped Inp Grown Inp Spectroscopy Resonance Wafer
学科领域半导体材料
主办者IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9910
专题中国科学院半导体研究所(2009年前)
通讯作者Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
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GB/T 7714
Zhao, YW,Dong, ZY,Zhang, YH,et al. Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:15-18.
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