中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共10条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation 会议论文
2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), Guangzhou, PEOPLES R CHINA, NOV 19-21, 2008
作者:  Yu, HM;  Liu, ZL;  Li, GS;  Yu, HM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(137Kb)  |  收藏  |  浏览/下载：1313/241  |  提交时间：2010/03/09
Adaptive Filter  Equalizer  Structure Adaptive  Fractional Tap-length  
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Dong, HW (Dong, Hongwei);  Sun, NF (Sun, Niefeng);  Sun, TN (Sun, Tongnian);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)  |  收藏  |  浏览/下载：1498/450  |  提交时间：2010/03/29
Stimulated Current Spectroscopy  Current Transient Spectroscopy  Fe-doped Inp  Point-defects  Compensation  Temperature  Donors  Traps  
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)  |  收藏  |  浏览/下载：1531/383  |  提交时间：2010/03/29
Encapsulated Czochralski Inp  Semiconductor Compound-crystals  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Deep-level Defects  Annealing Ambient  Point-defects  Fe  Phosphide  Donors  
Annealing ambient controlled deep defect formation in InP 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Zeng YP;  Sun NF;  Sun TN;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)  |  收藏  |  浏览/下载：1430/301  |  提交时间：2010/10/29
Fe-doped Inp  Semiinsulating Inp  Point-defects  Pressure  Wafers  Traps  
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Zhao, YW;  Dong, ZY;  Zhang, YH;  Li, CJ;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)  |  收藏  |  浏览/下载：1254/312  |  提交时间：2010/03/29
Deep-level Defects  Fe-doped Inp  Grown Inp  Spectroscopy  Resonance  Wafer  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1241/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文
1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, SHATIN, HONG KONG, 36337
作者:  Wang ZG;  Liang JB;  Qian G;  Xu B;  Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1055/176  |  提交时间：2010/10/29
High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Sheng SR;  Liao XB;  Ma ZX;  Yue GZ;  Wang YQ;  Kong GL;  Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(390Kb)  |  收藏  |  浏览/下载：1242/281  |  提交时间：2010/10/29
A-si-h  Light Soaking  Photoconductivity  Increase  
The SPER and characteristics of Si1-yCy alloys 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu Z;  Yu JZ;  Cheng BW;  Lei ZL;  Li DZ;  Wang QM;  Liang JW;  Yu Z Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1259/206  |  提交时间：2010/10/29
Si1-ycy Alloys  Ion implantatIon  Solid Phase Epitaxy Recrystallization  
Hydrogen related defects in InP 会议论文
PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 98 (2), SAN DIEGO, CA, MAY 03-08, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(259Kb)  |  收藏  |  浏览/下载：1243/172  |  提交时间：2010/10/29