Improvement of the electrical property of semi-insulating InP by suppression of compensation defects

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
	Zhao, YW; Dong, ZY; Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
	2005
会议名称	17th International Conference on Indium Phosphide and Related Materials
会议录名称	2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS
页码	163-166
会议日期	MAY 08-12, 2005
会议地点	Glasgow, SCOTLAND
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISSN	1092-8669
ISBN	0-7803-8891-7
部门归属	chinese acad sci, ctr mat sci, inst semicond, beijing 10083, peoples r china
摘要	Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than SI-InP annealed in phosphorus ambient. The defect suppression phenomenon correlates with Fe diffusion and substitution in the annealing process. Analysis of the experimental result suggests that a high activation ratio of incorporated Fe in InP has an effect of defect suppression in Fe-doped and Fe-diffused SI-InP.
关键词	Encapsulated Czochralski Inp Semiconductor Compound-crystals Stimulated Current Spectroscopy Current Transient Spectroscopy Deep-level Defects Annealing Ambient Point-defects Fe Phosphide Donors
学科领域	半导体物理
主办者	IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10126
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, YW,Dong, ZY,Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.. Improvement of the electrical property of semi-insulating InP by suppression of compensation defects[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2005:163-166.

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