中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共177条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Zhang, WC;  Wu, NJ;  Zhang, WC, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(517Kb)  |  收藏  |  浏览/下载：1550/300  |  提交时间：2010/03/09
Transistors  Technology  Devices  
Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Geng, MM;  Jia, LX;  Zhang, L;  Yang, L;  Liu, YL;  Li, F;  Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(607Kb)  |  收藏  |  浏览/下载：1646/309  |  提交时间：2010/03/09
Wave-guides  Devices  Design  
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  收藏  |  浏览/下载：1868/329  |  提交时间：2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Huang, QZ;  Yu, JZ;  Chen, SW;  Xu, XJ;  Han, WH;  Fan, ZC;  Huang, QZ, Chinese Acad Sci, Inst Semicond, Natl Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(324Kb)  |  收藏  |  浏览/下载：1765/571  |  提交时间：2010/03/09
Resonator  Silicon-on-insulator  Quality Factor  Propagation Loss  
Characterization of high-speed optoelectronics devices based optical and electrical spectra analyses - art. no. 68380Q 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Wen, JM;  Zhu, NH;  Zhang, T;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(560Kb)  |  收藏  |  浏览/下载：1444/401  |  提交时间：2010/03/09
Frequency Response  Additional Modulation  Modulation Index  Chirp Parameters  Optical And Electrical Spectra Analyses  
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Sun, MX;  Tan, MQ;  Zhao, M;  Sun, MX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(326Kb)  |  收藏  |  浏览/下载：1418/436  |  提交时间：2010/03/09
Antireflective Coatings  Superluminescent Diodes  Double Source Electron Beam Evaporation Technology  
Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Wang, L;  Zhao, LJ;  Chen, WX;  Pan, JQ;  Zhou, F;  Zhu, HL;  Wang, W;  Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(737Kb)  |  收藏  |  浏览/下载：1601/408  |  提交时间：2010/03/09
Photonic Integrated Circuit  Y-branch  Superluminescent Diode  Bundle Integrated Guide  Far Field Pattern  Reactive Ion Etching  
Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Ma, XY;  Zhong, L;  Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)  |  收藏  |  浏览/下载：3089/1103  |  提交时间：2010/03/09
Laser Diodes  Laser Bar  Stacks  High Power  Power Conversion Efficiency  Reliability  Packaging  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载：1357/225  |  提交时间：2010/03/09
Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Wang, N;  Li, N;  Liu, ZL;  Yu, F;  Li, GH;  Wang, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(933Kb)  |  收藏  |  浏览/下载：1212/227  |  提交时间：2010/03/09
Soi  Mosfet