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Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao C;  Chen YH;  Zhao M;  Zhang CL;  Xu B;  Yu LK;  Sun J;  Lei W;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：1696/335  |  提交时间：2010/03/29
Monte Carlo Simulation  
Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Islam MR;  Chen NF;  Yamada M;  Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh. 电子邮箱地址: islambit@yahoo.com
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1218/260  |  提交时间：2010/03/29
Raman Scattering  
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, XL;  Wang, CM;  Hu, GX;  Wang, JX;  Li, JP;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)  |  收藏  |  浏览/下载：1868/347  |  提交时间：2010/03/29
Molecular-beam Epitaxy  2-dimensional Electron-gas  Bulk Gan  Optimization  Layers  Hemts  
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, CM;  Wang, XL;  Hu, GX;  Wang, JX;  Li, JP;  Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)  |  收藏  |  浏览/下载：1234/297  |  提交时间：2010/03/29
High Breakdown Voltage  Mobility Transistors  Heterostructures  Sapphire  Ganhemts  
A 12-bit 300 MHz CMOS DAC for high-speed system applications 会议论文
2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS丛书标题: IEEE INTERNATIONAL SYMP ON CIRCUITS AND SYSTEMS, Kos Isl, GREECE, MAY 21-24, 2006
作者:  Ni, WN (Ni, Weining);  Geng, XY (Geng, Xueyang);  Shi, Y (Shi, Yin);  Dai, F (Dai, Foster);  Ni, WN, Chinese Acad Sci, Inst Semiconductors, Beijing 100083, Peoples R China.
Adobe PDF(3004Kb)  |  收藏  |  浏览/下载：1457/296  |  提交时间：2010/03/29
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Fang, CB;  Wang, XL;  Wang, JX;  Liu, C;  Wang, CM;  Hu, GX;  Li, JP;  Li, CJ;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)  |  收藏  |  浏览/下载：1361/262  |  提交时间：2010/03/29
Thermally Stimulated Current  Gallium Nitride  Defects  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1486/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Hu ZH (Hu Zhihua);  Liao XB (Liao Xianbo);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo);  Hu, ZH, New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: zhu@uninova.pt
Adobe PDF(123Kb)  |  收藏  |  浏览/下载：1888/499  |  提交时间：2010/03/29
Silicon  
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhou HY;  Qu SC;  Wang ZG;  Liang LY;  Cheng BC;  Liu JP;  Peng WQ;  Zhou, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouhy@mail.semi.ac.cn
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1966/369  |  提交时间：2010/03/29
Anodic Alumina Films  
Light-induced changes in diphasic nanocrystalline silicon films and solar cells 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Hao, HY (Hao, Huiying);  Liao, XB (Liao, Xianbo);  Zeng, XB (Zeng, Xiangbo);  Diao, HW (Diao, Hongwei);  Xu, Y (Xu, Ying);  Kong, GL (Kong, Guanglin);  Hao, HY, Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China. 电子邮箱地址: hyhao@red.semi.ac.cn
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1426/325  |  提交时间：2010/03/29
Silicon