Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation

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	Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
	Islam MR; Chen NF; Yamada M; Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh. 电子邮箱地址: islambit@yahoo.com
	2006
会议名称	11th Conference on Defects Recognition Imaging and Physics in Semiconductors
会议录名称	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
页码	9 (1-3): 184-187
会议日期	SEP 13-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
出版者	ELSEVIER SCI LTD
ISSN	1369-8001
部门归属	khulna univ engn & technol, dept elect & elect engn, khulna 920300, bangladesh; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; kyoto inst technol, dept elect & informat sci, sakyo ku, kyoto 6068585, japan
摘要	Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved.
关键词	Raman Scattering
学科领域	半导体材料
收录类别	CPCI（ISTP）
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9996
专题	中国科学院半导体研究所（2009年前）
通讯作者	Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh. 电子邮箱地址: islambit@yahoo.com
推荐引用方式 GB/T 7714	Islam MR,Chen NF,Yamada M,et al. Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2006:9 (1-3): 184-187.

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