Light-induced changes in diphasic nanocrystalline silicon films and solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Light-induced changes in diphasic nanocrystalline silicon films and solar cells
	Hao, HY (Hao, Huiying); Liao, XB (Liao, Xianbo); Zeng, XB (Zeng, Xiangbo); Diao, HW (Diao, Hongwei); Xu, Y (Xu, Ying); Kong, GL (Kong, Guanglin); Hao, HY, Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China. 电子邮箱地址: hyhao@red.semi.ac.cn
	2006
会议名称	21st International Conference on Amorphous and Nanocrystalline Semiconductors
会议录名称	JOURNAL OF NON-CRYSTALLINE SOLIDS
页码	352 (9-20): 1904-1908
会议日期	SEP 04-09, 2005
会议地点	Lisbon, PORTUGAL
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-3093
部门归属	chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china; china univ geosci, sch mat sci & technol, beijing 100083, peoples r china
摘要	A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.
关键词	Silicon
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10012
专题	中国科学院半导体研究所（2009年前）
通讯作者	Hao, HY, Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China. 电子邮箱地址: hyhao@red.semi.ac.cn
推荐引用方式 GB/T 7714	Hao, HY ,Liao, XB ,Zeng, XB ,et al. Light-induced changes in diphasic nanocrystalline silicon films and solar cells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:352 (9-20): 1904-1908.

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