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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
;
Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)
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浏览/下载:1742/232
  |  
提交时间:2010/03/09
Induced Refractive-index
Growth
Lasers
Gaas
Terahertz pulse generation with LT-GaAs photoconductive antenna
会议论文
Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, SEP 18-22, 2006
作者:
Cui, LJ (Cui, L. J.)
;
Zeng, YP (Zeng, Y. P.)
;
Zhao, GZ (Zhao, G. Z.)
;
Cui, LJ, Chinese Acad Med Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1019Kb)
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浏览/下载:1298/326
  |  
提交时间:2010/03/29
Temperature-grown Gaas
Carrier Dynamics
Emission
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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浏览/下载:1843/401
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提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
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浏览/下载:1724/258
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提交时间:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
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浏览/下载:1627/405
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:
Xu ZY
;
Luo XD
;
Yang XD
;
Tan PH
;
Yang CL
;
Ge WK
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
;
Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)
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  |  
浏览/下载:1724/334
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Alloys
Gaas1-xnx
Photoluminescence
Relaxation
Controllable growth of semiconductor nanometer structures
会议论文
MICROELECTRONICS JOURNAL, 34 (5-8), FORTALEZA, BRAZIL, DEC 08-13, 2002
作者:
Wang ZG
;
Wu J
;
Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(249Kb)
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收藏
  |  
浏览/下载:1335/233
  |  
提交时间:2010/11/15
Inas Quantum Dots
Self-organization
Monolayer Coverage
Density
Gaas
Islands
Inp(001)
Epitaxy
Optical study of electronic states in GaAsN
会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:
Luo XD
;
Yang CL
;
Huang JS
;
Xu ZY
;
Liu J
;
Ge WK
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
;
Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
Adobe PDF(188Kb)
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  |  
浏览/下载:1620/265
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Temperature Photoluminescence
Quantum-well
Alloys
Relaxation
Gaas1-xnx
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wu J
;
Zeng YP
;
Cui LJ
;
Zhu ZP
;
Wang BX
;
Wang ZG
;
Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(1208Kb)
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收藏
  |  
浏览/下载:1335/174
  |  
提交时间:2010/11/15
Inp(001)
Epitaxy
Gaas
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Ye XL
;
Chen YH
;
Xu B
;
Wang ZG
;
Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)
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收藏
  |  
浏览/下载:1203/220
  |  
提交时间:2010/11/15
Reflectance-difference Spectroscopy
Indium Segregation
Ingaas/gaas Quantum Wells
Epitaxy-grown Ingaas/gaas
Surface Segregation
Interface