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无权访问的条目 期刊论文
作者:  Li Z (Li Z.);  Li CJ (Li C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. E-mail: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：869/264  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Huang Y (Huang Y.);  Wang H (Wang H.);  Sun Q (Sun Q.);  Chen J (Chen J.);  Li DY (Li D. Y.);  Zhang JC (Zhang J. C.);  Wang JF (Wang J. F.);  Wang YT (Wang Y. T.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1095/315  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1168/503  |  提交时间：2010/04/11
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li, Z (Li, Z.);  Li, CJ (Li, C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1350/373  |  提交时间：2010/03/29
Dlts  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1287/281  |  提交时间：2010/03/29
4h-sic