SEMI OpenIR

浏览/检索结果: 共9条,第1-9条 帮助

限定条件                    
已选(0)清除 条数/页:   排序方式:
Annealing ambient controlled deep defect formation in InP 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Zeng YP;  Sun NF;  Sun TN;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)  |  收藏  |  浏览/下载:1578/301  |  提交时间:2010/10/29
Fe-doped Inp  Semiinsulating Inp  Point-defects  Pressure  Wafers  Traps  
无权访问的条目 期刊论文
作者:  Zhao, YW;  Dong, ZY;  Duan, ML;  Sun, WR;  Zeng, YP;  Sun, NF;  Sun, TN;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(155Kb)  |  收藏  |  浏览/下载:835/216  |  提交时间:2010/03/09
无权访问的条目 期刊论文
作者:  Dong ZY;  Zhao YM;  Zeng YP;  Duan ML;  Lin LY;  Dong, ZY, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100080, Peoples R China. 电子邮箱地址: dongzy@red.semi.ac.cn
Adobe PDF(181Kb)  |  收藏  |  浏览/下载:1107/316  |  提交时间:2010/03/09
Growth and characterization of 4H-SiC by horizontal hot-wall CVD 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Sun, GS;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(925Kb)  |  收藏  |  浏览/下载:1480/293  |  提交时间:2010/03/29
Chemical-vapor-deposition  
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Gao, X;  Li, JM;  Sun, GS;  Zhang, NH;  Wang, L;  Zhao, WS;  Zeng, YP;  Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)  |  收藏  |  浏览/下载:1252/196  |  提交时间:2010/03/29
Si(111)  Aln  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载:1550/208  |  提交时间:2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd  
无权访问的条目 期刊论文
作者:  Sun, GS;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载:919/289  |  提交时间:2010/03/17
无权访问的条目 期刊论文
作者:  董志远;  赵有文;  曾一平;  段满龙;  李晋闽
Adobe PDF(169Kb)  |  收藏  |  浏览/下载:817/276  |  提交时间:2010/11/23
无权访问的条目 期刊论文
作者:  王晓峰;  王雷;  赵万顺;  孙国胜;  黄风义;  曾一平
Adobe PDF(409Kb)  |  收藏  |  浏览/下载:960/236  |  提交时间:2010/11/23