Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
Gao, X; Li, JM; Sun, GS; Zhang, NH; Wang, L; Zhao, WS; Zeng, YP; Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
2004
会议名称13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议录名称SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
页码49-52
会议日期SEP 20-25, 2004
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN0-7803-8668-X
部门归属chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
摘要Hexagonal GaN films (similar to 3 mu m) were grown on 3c-SiC/Si(111) and carbonized Si(111) substrates using a thick AlN buffer Cracks are observed on the surface of the GaN film grown on the carbonized Si(111), while no cracks are visible on the 3c-SiC/Si(111). XRD exhibits polycrystalline nature of the GaN film grown on the carbonized Si(111) due to poorer crystalline quality of this substrate. Raman spectra reveal that all GaN layers are under tensile stress, and the GaN layer grown on 3c-SiC/Si(111) shows a very low stress value of sigma(xx) = 0.65 Gpa. In low-temperature Photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of Si impurities from the decomposition of SiC.
关键词Si(111) Aln
学科领域半导体材料
主办者IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9912
专题中国科学院半导体研究所(2009年前)
通讯作者Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Gao, X,Li, JM,Sun, GS,et al. Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:49-52.
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