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Optical study of electronic states in GaAsN 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Luo XD;  Yang CL;  Huang JS;  Xu ZY;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
Adobe PDF(188Kb)  |  收藏  |  浏览/下载:1657/265  |  提交时间:2010/10/29
Molecular-beam Epitaxy  Temperature Photoluminescence  Quantum-well  Alloys  Relaxation  Gaas1-xnx  
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(1208Kb)  |  收藏  |  浏览/下载:1369/174  |  提交时间:2010/11/15
Inp(001)  Epitaxy  Gaas  
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:  Wang H;  Shang SX;  Yao WF;  Hou Y;  Xu XH;  Wang D;  Wang M;  Yu JZ;  Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)  |  收藏  |  浏览/下载:1167/178  |  提交时间:2010/11/15
Bi2ti2o7  Thin Film  Mocvd  (111) Orientation  Chemical-vapor-deposition  Crystal Thin-films  
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001
作者:  Sun GS;  Luo MC;  Wang L;  Zhu SR;  Li JM;  Zeng YP;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(751Kb)  |  收藏  |  浏览/下载:1660/300  |  提交时间:2010/11/15
3c-sic  In-situ Doping  Low-pressure Cvd  Sapphire Substrate  Chemical-vapor-deposition  Competition Epitaxy  
Studies of 6H-SiC devices 会议论文
CURRENT APPLIED PHYSICS, 2 (5), SEOUL, SOUTH KOREA, DEC 05-09, 2001
作者:  Wang SR;  Liu ZL;  Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
收藏  |  浏览/下载:1012/0  |  提交时间:2010/11/15
Sic  Schottky  Pn Junction Diodes  Mos Capacitor  Junction Diodes  
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(1325Kb)  |  收藏  |  浏览/下载:1565/242  |  提交时间:2010/11/15
Molecular-beam Epitaxy  
无权访问的条目 期刊论文
作者:  Wang YQ;  Liao XB;  Diao HW;  Cheng WC;  Li GH;  Chen CY;  Zhang SB;  Xu YY;  Chen WD;  Kong GL;  Wang YQ,Chinese Acad Sci,Inst Semicond,State Lab Surface Phys,Beijing 100083,Peoples R China.
Adobe PDF(726Kb)  |  收藏  |  浏览/下载:881/274  |  提交时间:2010/08/12
无权访问的条目 期刊论文
作者:  Zhang ZC;  Yang SY;  Zhang FQ;  Li DB;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载:1017/372  |  提交时间:2010/08/12
无权访问的条目 期刊论文
作者:  Lu LW;  Yan H;  Yang CL;  Xie MH;  Wang ZG;  Wang J;  Ge WK;  Lu LW,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(105Kb)  |  收藏  |  浏览/下载:1206/358  |  提交时间:2010/08/12
无权访问的条目 期刊论文
作者:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Yuan HR;  Han PD;  Wang D;  Wang ZG;  Li GH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(93Kb)  |  收藏  |  浏览/下载:1264/566  |  提交时间:2010/08/12