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1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
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1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 11, 页码: Art.No.111105
Authors:  Han, Q;  Yang, XH;  Niu, ZC;  Ni, HQ;  Xu, YQ;  Zhang, SY;  Du, Y;  Peng, LH;  Zhao, H;  Tong, CZ;  Wu, RH;  Wang, QM;  Han, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hanqin@red.semi.ac.cn
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Quantum-well Lasers  
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
Authors:  Li Q;  Fang ZL;  Xu SJ;  Li GH;  Xie MH;  Tong SY;  Zhang XH;  Liu W;  Chua SJ;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
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Piezoelectric Field  Photoluminescence  Temperature  
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 期刊论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 卷号: 235, 期号: 2, 页码: 427-431
Authors:  Li Q;  Fang ZL;  Xu SJ;  Li GH;  Xie MH;  Tong SY;  Zhang XH;  Liu W;  Chua SJ;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Piezoelectric Field  Photoluminescence  Temperature  
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 4, 页码: 677-679
Authors:  Zhao DG;  Xu SJ;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Vapor-phase Epitaxy  Phonon Deformation Potentials  Molecular-beam Epitaxy  Raman-scattering  Alpha-gan  Aln  Layers  Strain  Wurtzite  Films  
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
Authors:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
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Molecular-beam Epitaxy  
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Authors:  Ng YF;  Cao YG;  Xie MH;  Wang XL;  Tong SY;  Xie MH,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China. 电子邮箱地址: mhxie@hkusua.hku.hk
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Misfit Dislocations  Defects  Ingan  Gan  Reduction  Indium  Layers  Films  
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391
Authors:  Xu SJ;  Zheng LX;  Cheung SH;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Molecular-beam Epitaxy  Vapor-phase Epitaxy  Cubic Gan  Binding-energy  Photoluminescence  Pressure  Electron  Gaas  Aln  
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 卷号: 16, 期号: 1-2, 页码: 165-172
Authors:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Molecular-beam Epitaxy  
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 期刊论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 卷号: 188, 期号: 2, 页码: 681-685
Authors:  Xu SJ;  Or CT;  Li Q;  Zheng LX;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Optical-transitions  Photoluminescence