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Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Gong Q;  Liang JB;  Xu B;  Wang ZG;  Gong Q Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1041/177  |  提交时间：2010/10/29
Threshold  Operation  Layer  
Design and fabrication of GaAs OMIST photodetector 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Kang XJ;  Lin SM;  Liao QW;  Gao JH;  Liu SA;  Cheng P;  Wang HJ;  Zhang CH;  Wang QM;  Kang XJ Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1696/479  |  提交时间：2010/10/29
Photodetector  Oxidation  Materials Growth  
Bandpass filter by a stretch and double-exposure technique 会议论文
FIBER OPTIC COMPONENTS AND OPTICAL COMMUNICATIONS II, 3552, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Zhou KM;  An G;  Ge H;  Wang W;  Zhang L;  Bennion I;  Zhou KM Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(720Kb)  |  收藏  |  浏览/下载：1390/260  |  提交时间：2010/10/29
Preparation and photoluminescence of nc-Si/SiO2 MQW 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Cheng BW;  Yu JZ;  Yu Z;  Lei ZL;  Li DZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(416Kb)  |  收藏  |  浏览/下载：1350/350  |  提交时间：2010/10/29
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Yang GW;  Xu ZT;  Xu JY;  Ma XY;  Zhang JM;  Chen LH;  Yang GW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(356Kb)  |  收藏  |  浏览/下载：1428/382  |  提交时间：2010/10/29
Strained Quantum Well  Semiconductor Lasers  
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1363/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Visible vertical cavity surface emitting laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Cheng P;  Ma XY;  Gao JH;  Kang XJ;  Cao Q;  Wang HJ;  Luo LP;  Zhang CH;  Lu XL;  Lin SM;  Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(469Kb)  |  收藏  |  浏览/下载：1410/385  |  提交时间：2010/10/29
Semiconductor Lasers  Oxidation  
无权访问的条目 期刊论文
作者:  Pan D;  Towe E;  Kennerly S;  Pan D,Univ Virginia,Lab Opt & Quantum Elect,Charlottesville,VA 22903 USA.
Adobe PDF(71Kb)  |  收藏  |  浏览/下载：1089/342  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Guo LW;  Shi JJ;  Cheng WQ;  Li YK;  Huang Q;  Zhou JM;  Guo LW,Chinese Acad Sci,Inst Phys,POB 603,Beijing 100080,Peoples R China.
Adobe PDF(218Kb)  |  收藏  |  浏览/下载：1023/265  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Huang YZ;  Huang YZ,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(85Kb)  |  收藏  |  浏览/下载：762/215  |  提交时间：2010/08/12